Non-Ga focused ion beams (FIB) are often applied in the development of future quantumand nano-electronic applications. GFIS based Helium Ion Microscopy (HIM) is providingbest resolution Nobel gas FIB based imaging and nanofabrication capabilities [1,2]. I willpresent how Ne based HIM has been used for the accelerated development of an irradiationprotocol for the fabrication of CMOS compatible Si based single electron transistors [3]. Weused ion beam mixing of Si and SiO2to form individual Si nanoscrystals with a size of2nmto3nmembedded in an SiO2matrix. In addition I will present a method to reduce thediameter of individual Si nanopillars by ion beam irradiation by50 %.In an second example I will show how we can use GFIS based spatially resolved ion beamirradiation to locally tune the magnetic landscape. These type of applications pave the wayfor various fundamental studies as well as applications based on standing and propagatingspin waves.I will end my presentation with a presentation of the FIT4NANO network and a previewof the FIB roadmap which is currently designed by this COST network.Part of this work has been performed in the framework of COST Action FIT4NANO(CA19140) and the European Commission H-2020 programme under grant agreement No.688072.

References

[1]Hlawacek, G., Veligura, V., van Gastel, R. & Poelsema, B. Helium ion microscopy.Journal of Vacuum Science and Technology B32, 020801 (2014).arXiv:1311.1711v1.

[2]Hlawacek, G. & Gölzhäuser, A. (eds.)Helium Ion Microscopy. NanoScience and Technology(Springer International Publishing, Switzerland, 2016).

[3]Xu, X.et al.Site-controled formation of single Si nanocrystals in a buried SiO2matrix usingion beam mixing.Beilstein Journal of Nanotechnology9, 2883–2892 (2018).1910.04389.