Impurities implantation controlled by using singly and multiply charged focused ion beams.

Stephane Guillous

The PELIICAEN [1] (Platform for the Study of Ion Implantation Controlled and Analyzed at the Nanometric Scale) setup is able to produce focused mono and multiply charged ions beam from a dedicated ECRIS (Electron Cyclotron Resonance Ion Source). The system can provide a broad range of species (H to Bi) and kinetic energies (from 2 to more than 500 keV), up to middle range charge states (Ar8+, Bi17+), focused down to a mask less 100 nm spot size [2].

The apparatus includes different types of in-situ microscopes such as a SEM (Scanning Electron Microscope) and a SPM (Scanning Probe Microscopies) in Ultra High Vacuum environment below 10-9 mbar and detectors such as MCP (Multi Channel Plate) or SED (Secondary Electron Detector).

In addition, we developed an ultra-high-performance pulser that allows us to erase the beams in situ, without any tail, with repetition rates up to 1 MHz, thus enabling us to use these focused beams for time-of-flight measurements and to move towards single ion implantation at high repetition rates.

I will present performances and some results obtained with the apparatus and show that by using all these means, localized doping is possible for applications in quantum science and technologies.

[1] S. Guillous et al., “A new setup for localized implantation and live-characterization of keV energy multiply charged ions at the nanoscale,” Rev. Sci. Instrum. 87, 113901 (2016).

[2] Mathieu Lalande et al., “Nanoscale multiply charged focused ion beam platform for surface modification, implantation and analysis”, Rev. Sci. Instrum. 93, 043703 (2022)