Ion beam implantation activities at the University of Torino – status and perspectives

Paolo Olivero, on behelf of the “Solid State Physics” Research Group. Physics Department and inter-departmental centre, University of Torino via P.Giuria 1-10125 Torino, Italy

The  Solid State Physics Research Group of the University of Torino has a long standing track record in research activities focused on the use of energetic ion beams for both the characterization and controlled modification of a broad class of advanced devices and materials [1].

In the last decade, the Research Group committed an ever-increasing focus on the employment of the use of energetic ions for the functionalization of (conventional and wide band-gap) semiconductors for applications in quantum technologies, that motivated a strong support and interest towards the RAISIN initiative.

Such research activity is currently organized in the following main topics:

  • development of Ion Beam Induced Charge (IBIC) based techniques for the deterministic doping of semiconductor substrates with high spatial resolution, for applications in quantum information processing [2];
  • use of ion beam irradiation for defect engineering of wide-bandgap semiconductors (diamond, silicon carbide, etc.), with the purpose of developing quantum-light emitters with optimal properties in the field of quantum communication [3];
  • ion-beam-based defect engineering in both single-crystal and nano-crystalline diamond for the development of quantum biosensors based on nitrogen-vacancy complexes [4].

Furthermore, a state-of-the-art multi-elemental 100 kV ion implanter was recently installed at the laboratories of the Research Group, with the support of the “Departments of Excellent” national program awarded to the Physics Department of the University of Torino. The implanter is currently in its ramp-up phase, with the plan of becoming a key asset in the above-listed fields of research.

This contribution will provide a quick overview of both the current research activities, and of the foreseeable plans for this new research facility.



[2] Modeling of ion beam induced charge sharing experiments for the design of high resolution position sensitive detectors , J. Forneris, D.N. Jamieson, G. Giacomini, C. Yang, E. Vittone, Nuclear Instruments and Methods in Physics Research B 306, 169 (2013) 169

[3] Quantum nanophotonics with group IV defects in diamond, C. Bradac, W. Gao, J. Forneris, M. E. Trusheim, I. Aharonovich, Nature Communications 10, 5625 (2019)

[4] Nanodiamonds-induced effects on neuronal firing of mouse hippocampal microcircuits L. Guarina, C. Calorio, D. Gavello, E. Moreva, P. Traina, A. Battiato, S. Ditalia Tchernij, J. Forneris, M. Gai, F. Picollo, P. Olivero, M. Genovese, E. Carbone, A. Marcantoni, V. Carabelli, Scientific Reports 8, 2221 (2018)