Non-destructive imaging of atomically thin dopant device structures in silicon

Taylor Stock
University College London

Using scanning tunnelling microscopy hydrogen resist lithography, it is now possible to fabricate dopant device structures in silicon with atomic-scale precision. The resulting device structures, in which few and single atoms serve as active device elements, could provide the building blocks of complex silicon quantum electronic technologies. A critical step in this fabrication procedure requires non-destructive imaging of atomically-thin dopant device patterns for both device structure assessment and pattern alignment.  In this talk, I will explore a number of non-destructive image techniques including work towards in-operando measurements on atomic-scale devices using non-contact atomic force microscopy.