Using scanning tunnelling microscopy hydrogen resist lithography, it is now possible to fabricate dopant device structures in silicon with atomic-scale precision. The resulting device structures, in which few and single atoms serve as active device elements, could provide the building blocks of complex silicon quantum electronic technologies. A critical step in this fabrication procedure requires non-destructive imaging of atomically-thin dopant device patterns for both device structure assessment and pattern alignment.  In this talk, I will explore a number of non-destructive image techniques including work towards in-operando measurements on atomic-scale devices using non-contact atomic force microscopy.